• home

Bipolar Transistor Tester

This tester is primarily meant to test bipolar transistors. It can indicate the type of the transistor as well as identify its base, collector and emitter pins. The circuit is very simple. The direction of current flow from the terminals of the transistor under test (TUT) is indicated by a pair of LEDs (green-red). An npn transistor produces a red-green-red glow, while a pnp transistor produces a green-red-green glow, depending on the test point that connects to the terminal of the transistor. Emitter and collector are differentiated by pressing pushbutton switch S1 that actually increases the supply voltage of the circuit by about 5.1V.

At the heart of the circuit is IC CD4069 (IC3), which oscillates and produces pulses required to test a pair of transistor leads for conduction in both the directions. Different combinations are selected by an arrangement of counter CD4040 (IC1) and bilateral switch CD4016 (IC2). Fig. 1 shows the circuit of the bipolar transistor tester. A pair of LEDs is connected to each test point through which current flows in both the directions. Each LED corresponds to a particular direction. In this manner, both junctions of the transistor can be tested. The LEDs are arranged to indicate the type of the semiconductor across the p-n junction.

The counter is clocked by the AC generator built around gates N5 and N6. This makes the LEDs glow continuously for easy observation, revealing the direction of current flow between different test points. So if the red LED connected to certain point glows, it means that n-type of the junction is connected to that test point, and vice versa. Thusared-green-red glow indicates npn type of the transistor, while a green-red-green glow indicates a pnp transistor. From this observation, you can easily detect the base.
Bipolar Transistor TesterFig. 1: Circuit of bipolar transistor tester

Collector and emitter are differentiated based on the principle that the base-emitter junction breaks down under reverse bias much more easily than the base-collector junction. Thus under increased AC voltage, you can easily see that the emitter conducts more in the reverse direction (associated LED glows significantly) than the collector. Use of transparent or semi-transparent LEDs is recommended.


Bipolar Transistor Tester
Adjust preset VR1 (2-mega-ohm) to get equal glow when any two test points are shorted. Unregulated 15V-18V is regulated by the zener-transistor combination to power the circuit. The testing procedure is simple. Normally, the transistors can be plugged in any orientation as they come in a variety of possible arrangements of base, collector and emitter pins, such as CEB, BEC and CBE. Simply plug the TUT in the possible combinations of three points. A red-green-red glow means that it is npn transistor and the pin associated with green LED is base. To identify the emitter and collector, simply press switch S1 and observe green LEDs adjacent to already glowing red LEDs. The green LED glowing with a high intensity indicates the emitter side, while the low-intensity LED indicates the collector side.

Similarly, a green-red-green glow means that the transistor is pnp type and the pin associated with the red LED is the base. To identify the emitter and collector, simply press switch S1 and observe red LEDs associated with the already glowing green LEDs on the sides. The LED glowing with a high intensity indicates the emitter side, while the low-intensity LED indicates the collector side. Assemble the circuit on a general-purpose PCB and enclose in a small box. Keep the preset knob in the middle. In order to make it easy to plug the TUT, you can increase the number of test points as shown in the authors prototype in Fig. 2
 
 
Source : Extreamcirciuts

10 000x With One Transistor

For a collector follower with emitter resistor, you’ll often find that the gain per stage is no more than 10 to 50 times. The gain increases when the emitter resistor is omitted. Unfortunately, the distortion also increases. With a ubiquitous transistor such as the BC547B, the gain of the transistor is roughly equal to 40 times the collector current (Ic), provided the collector current is less than a few milliamps. This value is in theory equal to the expression q/KT, where q is the charge of the electron, K is Boltzmann’s constant and T is the temperature in Kelvin.

For simplicity, and assuming room temperature, we round this value to 40. For a single stage amplifier circuit with grounded emitter it holds that the gain Uout /Uin (for AC voltage) is in theory equal to SRc. As we observed before, the slope S is about 40Ic. From this follows that the gain is approximately equal to 40I cRc. What does this mean? In the first instance this leads to a very practical rule of thumb: that gain of a grounded emitter circuit amounts to 40·I c·Rc, which is equal to 40 times the voltage across the collector resistor.

If Ub is, for example, equal to 12 V and the collector is set to 5V, then we know, irrespective of the values of the resistors that the gain will be about 40R(12–5) = 280. Notable is the fact that in this way the gain can be very high in theory, by selecting a high power supply voltage. Such a voltage could be obtained from an isolating transformer from the mains. An isolating transformer can be made by connecting the secondaries of two transformers together, which results in a galvanically isolated mains voltage.

Circuit diagram:

That means, that with a mains voltage of 240 Veff there will be about 340 V DC after rectification and filtering. If in the amplifier circuit the power supply voltage is now 340 V and the collector voltage is 2 V, then the gain is in theory equal to 40 x (340–2). This is more than 13,500 times! However, there are a few drawbacks in practice. This is related to the output characteristic of the transistor. In practice, it turns out that the transistor does actually have an output resistor between collector and emitter.

This output resistance exists as a transistor parameter and is called ‘hoe’. In normal designs this parameter is of no consequence because it has no noticeable effect if the collector resistor is not large. When powering the amplifier from 340 V and setting the collector current to 1 mA, the collector resistor will have a value of 338 k. Whether the ‘hoe’-parameter has any influence depends in the type of transistor. We also note that with such high gains, the base-collector capacitance in particular will start to play a role.

As a consequence the input frequency may not be too high. For a higher bandwidth we will have to use a transistor with small Cbc, such as a BF494 or perhaps even an SHF transistor such as a BFR91A. We will have to adjust the value of the base resistor to the new hfe. The author has carried out measurements with a BC547B at a power supply voltage of 30 V. A value of 2 V was chosen for the collector voltage. Measurements confirm the rule of thumb. The gain was more than 1,000 times and the effects of ‘hoe’ and the base-collector capacitance were not noticeable because of the now much smaller collector resistor.
Author: Gert Baars
Copyright: Elektor Electronics